However, most of them cannot retain steep switching at room temperature, and device performance degradation issues caused by impact ionization-induced hot carriers have not been structurally addressed.
Recently, two-dimensional material-based impact ionization transistors with various structures have been reported with the advantages of a low critical electric field and a unique quantum confinement effect. A steep switching device with a low subthreshold swing (SS) that overcomes the fundamental Boltzmann limit ( kT/ q) is required to efficiently process a continuously increasing amount of data.
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